| dc.contributor.author |
Yadav, Megha |
|
| dc.contributor.author |
Barnwal, Akshat |
|
| dc.contributor.author |
Reddy, Naga Sheshu |
|
| dc.contributor.author |
Kumar, Priyesh |
|
| dc.contributor.author |
Saha, Jhuma |
|
| dc.contributor.other |
8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2024) |
|
| dc.coverage.spatial |
India |
|
| dc.date.accessioned |
2024-05-16T14:32:41Z |
|
| dc.date.available |
2024-05-16T14:32:41Z |
|
| dc.date.issued |
2024-03-03 |
|
| dc.identifier.citation |
Yadav, Megha; Barnwal, Akshat; Reddy, Naga Sheshu; Kumar, Priyesh and Saha, Jhuma, "Impact of Sb variation and electric field on InAs/Ga(As)Sb superlattice structures", in the 8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2024), Bangalore, IN, Mar. 03-06, 2024 |
|
| dc.identifier.uri |
https://doi.org/10.1109/EDTM58488.2024.10511963 |
|
| dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/10058 |
|
| dc.description.abstract |
This work presents the analysis of wavefunctions and miniband-formation in a 150-well InAs/GaAs1−xSbx based superlattice structure. A type-I to type-II transition is observed at an Sb mole fraction (x) of 0.15, which facilitates the use of the same material-based structures to accommodate multiple applications in light emission and detection. Further, the effects of an applied electric field on the band diagram and electron wave-functions were studied. |
|
| dc.description.statementofresponsibility |
by Megha Yadav, Akshat Barnwal, Naga Sheshu Reddy, Priyesh Kumar and Jhuma Saha |
|
| dc.language.iso |
en_US |
|
| dc.publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
|
| dc.subject |
Type-I/II superlattice |
|
| dc.subject |
Minibands |
|
| dc.subject |
Wave-functions |
|
| dc.subject |
Electric field |
|
| dc.title |
Impact of Sb variation and electric field on InAs/Ga(As)Sb superlattice structures |
|
| dc.type |
Conference Paper |
|