| dc.contributor.author |
Kumar, Hemant |
|
| dc.contributor.author |
Sakhuja, Jayatika |
|
| dc.contributor.author |
Lashkare, Sandip |
|
| dc.contributor.author |
Ganguly, Udayan |
|
| dc.contributor.other |
8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2024) |
|
| dc.coverage.spatial |
India |
|
| dc.date.accessioned |
2024-05-30T11:50:01Z |
|
| dc.date.available |
2024-05-30T11:50:01Z |
|
| dc.date.issued |
3/3/2024 |
|
| dc.identifier.citation |
Kumar, Hemant; Sakhuja, Jayatika; Lashkare, Sandip and Ganguly, Udayan, "On-voltage designability by triangular barrier engineering in bipolar silicon NIPIN-selector for asymmetric bipolar RRAM", in the 8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2024), Bangalore, IN, Mar. 03-06, 2024. |
|
| dc.identifier.uri |
https://doi.org/10.1109/EDTM58488.2024.10511482 |
|
| dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/10094 |
|
| dc.description.abstract |
Non-linear threshold selectors are essential for leakage current mitigation in memristor crossbar arrays. In recent works, vertical 4 F2 bipolar n+/i/δp+/i/n+Si(NIPIN) selector exhibiting ∼120mV/decade subthreshold slope has been demonstrated. Bipolar asymmetric resistive RAM(RRAM) requires a bipolar asymmetric selector. Here, we show the modulation of the intrinsic(i) region width to design the threshold voltage on either polarity. The voltage requirement is relatively reduced by excess voltage, reducing power consumption with asymmetric selectors for array operations. |
|
| dc.description.statementofresponsibility |
by Hemant Kumar, Jayatika Sakhuja, Sandip Lashkare and Udayan Ganguly |
|
| dc.language.iso |
en_US |
|
| dc.publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
|
| dc.subject |
Bipolar-RRAM |
|
| dc.subject |
Asymmetric-NIPIN selector |
|
| dc.subject |
Voltage designability |
|
| dc.subject |
Crossbar arrays |
|
| dc.title |
On-voltage designability by triangular barrier engineering in bipolar silicon NIPIN-selector for asymmetric bipolar RRAM |
|
| dc.type |
Conference Paper |
|