On the improved RF performance of step field plate LDMOS transistor

dc.contributor.author	Patel, Rutu
dc.contributor.author	Mohapatra, Nihar Ranjan
dc.coverage.spatial	United States of America
dc.date.accessioned	2024-07-31T07:39:10Z
dc.date.available	2024-07-31T07:39:10Z
dc.date.issued	2024-06
dc.identifier.citation	Patel, Rutu and Mohapatra, Nihar Ranjan, "On the improved RF performance of step field plate LDMOS transistor", Microelectronics Journal, DOI: 10.1016/j.mejo.2024.106210, vol. 148, Jun. 2024.
dc.identifier.issn	0026-2692
dc.identifier.uri	https://doi.org/10.1016/j.mejo.2024.106210
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/10263
dc.description.statementofresponsibility	by Rutu Patel and Nihar Ranjan Mohapatra
dc.format.extent	vol. 148
dc.language.iso	en_US
dc.publisher	Elsevier
dc.subject	RF LDMOS transistor
dc.subject	Field plate
dc.subject	Transconductance
dc.subject	Output conductance
dc.subject	Capacitance
dc.subject	Power amplifier
dc.subject	Gain
dc.subject	Drain efficiency
dc.subject	Power compression
dc.subject	IMDLinearity
dc.title	On the improved RF performance of step field plate LDMOS transistor
dc.type	Article
dc.relation.journal	Microelectronics Journal