Design and optimization of high voltage, high power LDMOS transistors for RF applications

dc.contributor.advisor	Mohapatra, Nihar Ranjan
dc.contributor.author	Patel, Rutu A.
dc.date.accessioned	2024-09-13T08:19:25Z
dc.date.available	2024-09-13T08:19:25Z
dc.date.issued	2024
dc.identifier.citation	Patel, Rutu A. (2024). Design and optimization of high voltage, high power LDMOS transistors for RF applications. Gandhinagar: Indian Institute of Technology Gandhinagar, 145p. (Acc. No.: T01166).
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/10453
dc.description.statementofresponsibility	by Rutu A. Patel
dc.format.extent	xxvi, 145p.: hbk.; 30 cm
dc.language.iso	en_US
dc.publisher	Indian Institute of Technology Gandhinagar
dc.subject	Radio Frequency
dc.subject	Figures-of-Merits (FoMs)
dc.subject	Step Field Plate (SFP)
dc.subject	LDMOS Transistor
dc.title	Design and optimization of high voltage, high power LDMOS transistors for RF applications
dc.type	Thesis
dc.contributor.department	Electrical Engineering
dc.description.degree	PhD