Fabricating highly stable and reliable vanadium dioxide thin films: insights from radio frequency magnetron sputtering

Abstract

This study establishes an optimization protocol to fabricate a stoichiometric VO2 thin film onto the glass substrate using a single process step in RF magnetron sputtering. An interplay between the substrate temperature and the oxygen-to-argon ratio in process gas is shown to achieve a range of VOx composition (from oxygen-rich to oxygen-deficient phases). The re-sputtering phenomenon is found to be crucial at higher temperature (T ≥ 873 K), leading to a shift in stoichiometry from V2O5 to V2O3. Moreover, a process model for the fabrication of various VOx compounds in thin film form is also established in this study. The crystal structure transformation from M1 to R phase for these VO2 thin films deposited over a range of process conditions is found to be 339 ± 1 K, in close agreement with the reported value for the bulk VO2. In spite of the microstructural variations, these films are found to show consistent phase transition behavior, excellent stability, and reliability in repeated thermal cycles. These films show a semiconductor-to-metal transition, which is correlated to their structural phase transformation temperature. Moreover, this study also establishes a correlation between various external stimuli, widening the usage of this material in a range of applications.