| dc.contributor.author |
Bandaru, Narendra |
|
| dc.contributor.author |
Panda, Emila |
|
| dc.contributor.other |
International Conference on Materials Engineering (ICME - 2017) |
|
| dc.coverage.spatial |
Kanpur, IN |
|
| dc.date.accessioned |
2017-06-14T08:59:21Z |
|
| dc.date.available |
2017-06-14T08:59:21Z |
|
| dc.date.issued |
2017-01-02 |
|
| dc.identifier.citation |
Bandaru, Narendra and Panda, Emila, "Annealing induced electronic defect state transformation in Al-doped ZnO films", in the International Conference on Materials Engineering (ICME - 2017), Indian Institute of Technology Kanpur, IN, Jun. 2-4, 2017. |
en_US |
| dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/2970 |
|
| dc.description.statementofresponsibility |
by Narendra Bandaru and Emila Panda |
|
| dc.language.iso |
en_US |
en_US |
| dc.publisher |
Indian Institute of Technology Kanpur |
en_US |
| dc.title |
Annealing induced electronic defect state transformation in Al-doped ZnO films |
en_US |
| dc.type |
Presentation |
en_US |