Rasyotra, Anshul; Das, Mayukh; Sen, Dipanjan; Zhang, Zhiyu; Pannone, Andrew; Chen, Chen; Redwing, Joan M.; Yang, Yang; Jasuja, Kabeer; Das, Saptarshi
(American Chemical Society, 2025-05)
Development and integration of gate insulators that offer a low equivalent oxide thickness (EOT) while maintaining a physically thicker layer are critical for advancing transistor technology as device dimensions continue ...