High performance rediation hardened random access and content addressable memory designs

dc.contributor.advisor	Mekie, Joycee
dc.contributor.author	Barma, Abhishek
dc.date.accessioned	2019-08-29T09:48:14Z
dc.date.available	2019-08-29T09:48:14Z
dc.date.issued	2019
dc.identifier.citation	Abhishek, Barma (2019). High performance rediation hardened random access and content addressable memory designs. Gandhinagar: Indian Institute of Technology Gandhinagar, 75p. (Acc. No.: T00421).
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/4737
dc.description.statementofresponsibility	by Abhishek Barma
dc.format.extent	xi, 75p.: ill.; 30 cm.
dc.language.iso	en_US
dc.publisher	Indian Institute of Technology Gandhinagar
dc.subject	17210024
dc.subject	Electrical Engineering
dc.subject	Robust Circuits
dc.subject	Particle Strike Immunity
dc.subject	Dual Port-Dual Interlocked Structure
dc.subject	Mixed Vt Ternary Content Addressable Memory
dc.title	High performance rediation hardened random access and content addressable memory designs
dc.type	Thesis
dc.contributor.department	Electrical Engineering
dc.description.degree	M.Tech.