dc.contributor.author |
Bhoir, Mandar S. |
|
dc.contributor.author |
Chiarella, Thomas |
|
dc.contributor.author |
Ragnarsson, Lars A. |
|
dc.contributor.author |
Mitard, Jerome |
|
dc.contributor.author |
Horiguchi, Naoto |
|
dc.contributor.author |
Mohapatra, Nihar Ranjan |
|
dc.contributor.other |
4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2020) |
|
dc.coverage.spatial |
Penang, MY |
|
dc.date.accessioned |
2020-06-29T14:05:31Z |
|
dc.date.available |
2020-06-29T14:05:31Z |
|
dc.date.issued |
2020-04-06 |
|
dc.identifier.citation |
Bhoir, Mandar S.; Chiarella, Thomas; Ragnarsson, Lars A.; Mitard, Jerome; Horiguchi, Naoto and Mohapatra, Nihar Ranjan, “Process-induced Vt variability in nanoscale FinFETs: does Vt extraction methods have any impact?”, in the 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2020), Penang, MY, Apr. 6-21, 2020. |
en_US |
dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/5511 |
|
dc.description.statementofresponsibility |
by Mandar S. Bhoir, Thomas Chiarella, Lars A. Ragnarsson, Jerome Mitard, Naoto Horiguchi and Nihar Ranjan Mohapatra |
|
dc.language.iso |
en_US |
en_US |
dc.title |
Process-induced Vt variability in nanoscale FinFETs: does Vt extraction methods have any impact? |
en_US |
dc.type |
Article |
en_US |