Process-induced Vt variability in nanoscale FinFETs: does Vt extraction methods have any impact?

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dc.contributor.author Bhoir, Mandar S.
dc.contributor.author Chiarella, Thomas
dc.contributor.author Ragnarsson, Lars A.
dc.contributor.author Mitard, Jerome
dc.contributor.author Horiguchi, Naoto
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.other 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2020)
dc.coverage.spatial Penang, MY
dc.date.accessioned 2020-06-29T14:05:31Z
dc.date.available 2020-06-29T14:05:31Z
dc.date.issued 2020-04-06
dc.identifier.citation Bhoir, Mandar S.; Chiarella, Thomas; Ragnarsson, Lars A.; Mitard, Jerome; Horiguchi, Naoto and Mohapatra, Nihar Ranjan, “Process-induced Vt variability in nanoscale FinFETs: does Vt extraction methods have any impact?”, in the 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2020), Penang, MY, Apr. 6-21, 2020. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/5511
dc.description.statementofresponsibility by Mandar S. Bhoir, Thomas Chiarella, Lars A. Ragnarsson, Jerome Mitard, Naoto Horiguchi and Nihar Ranjan Mohapatra
dc.language.iso en_US en_US
dc.title Process-induced Vt variability in nanoscale FinFETs: does Vt extraction methods have any impact? en_US
dc.type Article en_US


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