| dc.contributor.author |
Ganeriwala, Mohit D. |
|
| dc.contributor.author |
Ruiz, Francisco G. |
|
| dc.contributor.author |
Marin, Enrique G. |
|
| dc.contributor.author |
Mohapatra, Nihar Ranjan |
|
| dc.contributor.other |
4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2020) |
|
| dc.coverage.spatial |
Penang, MY |
|
| dc.date.accessioned |
2020-06-29T14:05:31Z |
|
| dc.date.available |
2020-06-29T14:05:31Z |
|
| dc.date.issued |
2020-04-06 |
|
| dc.identifier.citation |
Ganeriwala, Mohit D.; Ruiz, Francisco G.; Marin, Enrique G. and Mohapatra, Nihar Ranjan, “Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs”, in the 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2020), Penang, MY, Apr. 6-21, 2020. |
en_US |
| dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/5512 |
|
| dc.description.statementofresponsibility |
by Mohit D. Ganeriwala, Francisco G. Ruiz, Enrique G. Marin and Nihar Ranjan Mohapatra |
|
| dc.language.iso |
en_US |
en_US |
| dc.title |
Significance of L-valley charges and a method to include it in electrostatic model of III-V GAA FETs |
en_US |
| dc.type |
Article |
en_US |