Interrelation between electronic structure, microstructure and optoelectronic properties of Al-doped ZnO and Cu2-xS

dc.contributor.advisor	Panda, Emila
dc.contributor.author	Patel, Tvarit A.
dc.date.accessioned	2020-12-03T09:25:55Z
dc.date.available	2020-12-03T09:25:55Z
dc.date.issued	2020
dc.identifier.citation	Patel, Tvarit A. (2020). Interrelation between electronic structure, microstructure and optoelectronic properties of Al-doped ZnO and Cu2-xS. Gandhinagar: Indian Institute of Technology Gandhinagar, 183p. (Acc. No.: T00521).
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/5927
dc.description.statementofresponsibility	by Tvarit A. Patel
dc.format.extent	xvi, 183p.: ill.; 30 cm.
dc.language.iso	en_US
dc.publisher	Indian Institute of Technology Gandhinagar
dc.subject	12310026
dc.subject	Materials Science and Engineering
dc.subject	Transparent Conductor
dc.subject	Optoelectronic
dc.subject	Scanning Tunneling Microscopy
dc.title	Interrelation between electronic structure, microstructure and optoelectronic properties of Al-doped ZnO and Cu2-xS
dc.type	Thesis
dc.contributor.department	Materials Science and Engineering
dc.description.degree	Ph.D.