Microstructure modulated optoelectronic properties of Al-doped ZnO and CuInGaSe2 films using cost-effective, scalable deposition techniques

dc.contributor.advisor	Panda, Emila
dc.contributor.author	Bandaru, Narendra
dc.date.accessioned	2020-12-03T09:25:56Z
dc.date.available	2020-12-03T09:25:56Z
dc.date.issued	2019
dc.identifier.citation	Bandaru, Narendra (2019). Microstructure modulated optoelectronic properties of Al-doped ZnO and CuInGaSe2 films using cost-effective, scalable deposition techniques. Gandhinagar: Indian Institute of Technology Gandhinagar, 190p. (Acc. No.: T00538).
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/5944
dc.description.statementofresponsibility	by Narendra Bandaru
dc.format.extent	xvi, 190.: ill.; 30 cm.
dc.language.iso	en_US
dc.publisher	Indian Institute of Technology Gandhinagar
dc.subject	13310033
dc.subject	Materials Science and Engineering
dc.subject	Scalable Deposition Techniques
dc.subject	Spin Coating Process
dc.subject	Single Charged Oxygen Vacancies
dc.subject	Microstructure And Optoelectronic
dc.title	Microstructure modulated optoelectronic properties of Al-doped ZnO and CuInGaSe2 films using cost-effective, scalable deposition techniques
dc.type	Thesis
dc.contributor.department	Materials Science and Engineering
dc.description.degree	Ph.D.