dc.contributor.author |
H., Hemanth |
|
dc.date.accessioned |
2021-04-01T15:04:33Z |
|
dc.date.available |
2021-04-01T15:04:33Z |
|
dc.date.issued |
2021-03 |
|
dc.identifier.citation |
H., Hemanth, "Rational construction of organic electronic devices based on s-indacene fragments", ChemRxiv.org, DOI: 10.26434/chemrxiv.14267333.v1, Mar. 2021. |
en_US |
dc.identifier.uri |
http://dx.doi.org/10.26434/chemrxiv.14267333.v1 |
|
dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/6403 |
|
dc.description.abstract |
Organic electronic devices are sought after for their mechanical and electrical properties and economic viability. Recent advances in the literature point to a plethora of molecules synthesized for applications in organic electronics and solar cells. However, a complete understanding of the design principles for constructing such devices with tailor-made properties is absent in the literature. Herein, we report the computational investigation of s-indacene as a viable candidate for the construction of organic electronic devices. We also investigate the effect of molecular topology on the frontier energy levels of the s-indacene fragments and the possibility of tuning the frontier energy levels by a rational choice of substituents and bridging groups. The rationale behind the choice of s-indacene fragments as the ba sis for the construction of 2D organic electronic devices with tailor-made properties can be extended towards the construction of other 2D covalent organic frameworks with applications in organic electronics and spintronics. |
|
dc.description.statementofresponsibility |
by Hemanth H. |
|
dc.language.iso |
en_US |
en_US |
dc.title |
Rational construction of organic electronic devices based on s-indacene fragments |
en_US |
dc.type |
Pre-Print |
en_US |
dc.relation.journal |
ChemRxiv |
|