| dc.contributor.author |
Patil, Shubham |
|
| dc.contributor.author |
Kaushal, Kumari Neeraj |
|
| dc.contributor.author |
Bhoir, Mandar S. |
|
| dc.contributor.author |
Mohapatra, Nihar Ranjan |
|
| dc.contributor.other |
5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2021) |
|
| dc.coverage.spatial |
Chengdu, CN |
|
| dc.date.accessioned |
2021-05-27T13:33:04Z |
|
| dc.date.available |
2021-05-27T13:33:04Z |
|
| dc.date.issued |
08-04-21 |
|
| dc.identifier.citation |
Patil, Shubham; Kaushal, Kumari Neeraj; Bhoir, Mandar S. and Mohapatra, Nihar Ranjan, "Physics-based parameter extraction methodology for channel doping gradient (CDG) LDMOS transistors based on HiSIM-HV2 model", in the 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2021), Chengdu, CN, Apr. 8-11, 2021. |
en_US |
| dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/6533 |
|
| dc.description.statementofresponsibility |
by Shubham Patil, Kumari Neeraj Kaushal, Mandar S. Bhoir and Nihar Ranjan Mohapatra |
|
| dc.language.iso |
en_US |
en_US |
| dc.title |
Physics-based parameter extraction methodology for channel doping gradient (CDG) LDMOS transistors based on HiSIM-HV2 model |
en_US |
| dc.type |
Article |
en_US |