Numerical analysis of quantum effects on advanced NsFET

dc.contributor.advisor	Mohapatra, Nihar Ranjan
dc.contributor.author	Dubey, Abhilash
dc.date.accessioned	2021-10-27T14:12:41Z
dc.date.available	2021-10-27T14:12:41Z
dc.date.issued	2021
dc.identifier.citation	Dubey, Abhilash (2021). Numerical analysis of quantum effects on advanced NsFET. Gandhinagar: Indian Institute of Technology Gandhinagar, 68p. (Acc. No.: T00852).
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/7143
dc.description.statementofresponsibility	by Abhilash Dubey
dc.format.extent	xi, 68p.: ill.; hbk.; 30cm.
dc.language.iso	en_US
dc.publisher	Indian Institute of Technology Gandhinagar
dc.subject	19210066
dc.subject	Metal- Oxide-Semiconductor Field Effect Transistor -- MOSFET
dc.subject	Quantum Confinement
dc.subject	Mobility
dc.subject	Moore’s Law
dc.subject	Subband Energy
dc.title	Numerical analysis of quantum effects on advanced NsFET
dc.type	Thesis
dc.contributor.department	Electrical Engineering
dc.description.degree	M.Tech