Radiation hardened memory cell design and verification of memory macros at RTL level

dc.contributor.advisor	Mekie, Joycee
dc.contributor.author	Agarwal, Tushar
dc.date.accessioned	2021-10-27T14:12:42Z
dc.date.available	2021-10-27T14:12:42Z
dc.date.issued	2021
dc.identifier.citation	Agarwal, Tushar (2021). Radiation hardened memory cell design and verification of memory macros at RTL level. Gandhinagar: Indian Institute of Technology Gandhinagar, 130p. (Acc. No.: T00885).
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/7176
dc.description.statementofresponsibility	by Tushar Agarwal
dc.format.extent	xiv, 130p.: ill.; hbk.; 30 cm.
dc.language.iso	en_US
dc.publisher	Indian Institute of Technology Gandhinagar
dc.subject	19210111
dc.subject	Electrical Engineering
dc.subject	DICE Cell
dc.subject	Progressions
dc.subject	DNU Principle
dc.subject	Eletrostatisitcs
dc.subject	Micro Transistors
dc.subject	Chips
dc.title	Radiation hardened memory cell design and verification of memory macros at RTL level
dc.type	Thesis
dc.contributor.department	Electrical Engineering
dc.description.degree	M.Tech