Analysis of word line shaping techniques for in-memory computing in SRAMs

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dc.contributor.author Prasad, Kailash
dc.contributor.author Biswas, Aditya
dc.contributor.author Mekie, Joycee
dc.contributor.other 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2021)
dc.coverage.spatial Dubai, AE
dc.date.accessioned 2022-01-28T07:49:28Z
dc.date.available 2022-01-28T07:49:28Z
dc.date.issued 28-12-21
dc.identifier.citation Prasad, Kailash; Biswas, Aditya and Mekie, Joycee, "Analysis of word line shaping techniques for in-memory computing in SRAMs", in the 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2021), Dubai, AE, Nov. 28-Dec. 1, 2021. en_US
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/7437
dc.description.statementofresponsibility by Kailash Prasad, Aditya Biswas and Joycee Mekie
dc.language.iso en_US en_US
dc.title Analysis of word line shaping techniques for in-memory computing in SRAMs en_US
dc.type Conference Paper en_US


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