A 10T, 0.22fJ/bit/search mixed-VT pseudo precharge-free content addressable memory

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dc.contributor.author Datta, Diptesh
dc.contributor.author Surana, Neelam
dc.contributor.author Kumar, Anoop
dc.contributor.author Mekie, Joycee
dc.coverage.spatial United States of America
dc.date.accessioned 2022-04-19T06:30:49Z
dc.date.available 2022-04-19T06:30:49Z
dc.date.issued 2022-03
dc.identifier.citation Datta, Diptesh; Surana, Neelam; Kumar, Anoop and Mekie, Joycee, "A 10T, 0.22fJ/bit/search mixed-VT pseudo precharge-free content addressable memory", IEEE Transactions on Circuits and Systems II: Express Briefs, DOI: 10.1109/TCSII.2021.3103880, vol. 69, no. 3, pp. 1572-1576, Mar. 2022. en_US
dc.identifier.issn 1549-7747
dc.identifier.issn 1558-3791
dc.identifier.uri https://doi.org/10.1109/TCSII.2021.3103880
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/7653
dc.description.abstract Content Addressable Memories (CAMs) are high-speed hardware search engines that simultaneously perform a parallel search across the rows. This high speed comes at the cost of increased power. In CAMs, most of the power is consumed in the matchlines. Although precharge free CAMs eliminate the excessive power consumption due to the matchlines, they are comparatively slower than conventional CAMs. Further, our extensive Monte-Carlo (MC) simulation results show that existing precharge-free CAMs give false search results under process variations. In this brief, we propose a robust and energy-efficient pseudo-precharge-free CAM. For an array size of 32×32 , the proposed design shows ∼221× energy-delay-product reductions compared to the existing precharge-free CAMs. In comparison with NOR-type CAM, the proposed design has ∼7.75× and ∼7.2× of energy-delay-product reduction for the array size of 32×32 and 128×128 respectively. SPICE simulations were performed using Cadence Virtuoso in UMC 28nm technology node.
dc.description.statementofresponsibility by Diptesh Datta, Neelam Surana, Anoop Kumar and Joycee Mekie
dc.format.extent vol. 69, no. 3, pp. 1572-1576
dc.language.iso en_US en_US
dc.publisher Institute of Electrical and Electronics Engineers en_US
dc.subject CAM en_US
dc.subject SRAM en_US
dc.subject Hardware search en_US
dc.subject Precharge-free CAM en_US
dc.subject Mixed-VT en_US
dc.subject Process variations en_US
dc.subject Energy-delay-product en_US
dc.title A 10T, 0.22fJ/bit/search mixed-VT pseudo precharge-free content addressable memory en_US
dc.type Article en_US
dc.relation.journal IEEE Transactions on Circuits and Systems II: Express Briefs


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