Abstract:
The study focuses on the development of novel transparent electrode for maximizing energy harvesting and performance of an optoelectronic device. Along with the high visible transparency (of 82%), this electrode has also ensured high near-infrared transparency of 88% that is substantially higher than the conventionally used Sn-doped In2O3 (ITO), F-doped SnO2 (FTO) and Al-doped ZnO (AZO). The film shows an electrical resistivity of 24.54 × 10-3 Ω cm and a high electron concentration of 1.14 × 1021 cm-3. Moreover, this highly transparent visible/near-infrared Ta-doped TiO2 electrode is realized on a glass substrate that has inferior quality as compared to its crystalline counterparts and hence cost-effective. Here, magnetron sputtering, one of the commercially viable deposition techniques, is used to synthesize this electrode, thus enabling huge commercialization possibilities.