Process-induced uniaxial strain in Nanosheet-FET based CMOS technology-is it still beneficial?

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dc.contributor.author Kaur, Ramandeep
dc.contributor.author Mohapatra, Nihar Ranjan
dc.contributor.other 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2023)
dc.coverage.spatial Seoul, KR
dc.date.accessioned 2023-05-17T08:16:06Z
dc.date.available 2023-05-17T08:16:06Z
dc.date.issued 2023-03-07
dc.identifier.citation Kaur, Ramandeep and Mohapatra, Nihar Ranjan, "Process-induced uniaxial strain in Nanosheet-FET based CMOS technology-is it still beneficial?", in the 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM 2023), Seoul, KR, Mar. 7-10, 2023.
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/8822
dc.description.statementofresponsibility by Ramandeep Kaur and Nihar Ranjan Mohapatra
dc.language.iso en_US
dc.title Process-induced uniaxial strain in Nanosheet-FET based CMOS technology-is it still beneficial?
dc.type Conference Paper


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