Stability analysis of monolayer TMD FET, Si FinFET, and Si NSFET based 6T SRAM for N5 and beyond

dc.contributor.advisor	Agarwal, Tarun Kumar
dc.contributor.author	Srivastava, Ayush
dc.date.accessioned	2023-09-27T14:42:58Z
dc.date.available	2023-09-27T14:42:58Z
dc.date.issued	2023
dc.identifier.citation	Srivastava, Ayush (2023). Stability analysis of monolayer TMD FET, Si FinFET, and Si NSFET based 6T SRAM for N5 and beyond. Gandhinagar: Indian Institute of Technology Gandhinagar, 57p. (Acc. No.: T01116).
dc.identifier.uri	https://repository.iitgn.ac.in/handle/123456789/9314
dc.description.statementofresponsibility	by Ayush Srivastava
dc.format.extent	xii, 57p.: hbk.; 30 cm
dc.language.iso	en_US
dc.publisher	Indian Institute of Technology Gandhinagar
dc.subject	21250007
dc.subject	Transition Metal Dichalcogenides (TMD)
dc.subject	Field-Effect Transistors (FET)
dc.subject	6T-SRAM
dc.subject	Read-Static-Noise- Margin (RSNM)
dc.title	Stability analysis of monolayer TMD FET, Si FinFET, and Si NSFET based 6T SRAM for N5 and beyond
dc.type	Thesis
dc.contributor.department	Electrical Engineering
dc.description.degree	M.Tech