Hybrid CMOS-memristor logic for boosting the power-efficiency in error tolerant applications

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dc.contributor.author Pokharia, Monika
dc.contributor.author Prasad, Kailash
dc.contributor.author Hegde, Ravi S.
dc.contributor.author Mekie, Joycee
dc.contributor.other 37th International Conference on VLSI Design and 23rd International Conference on Embedded Systems (VLSID 2024)
dc.coverage.spatial India
dc.date.accessioned 2024-04-25T14:47:03Z
dc.date.available 2024-04-25T14:47:03Z
dc.date.issued 2024-01-06
dc.identifier.citation Pokharia, Monika; Prasad, Kailash; Hegde, Ravi S. and Mekie, Joycee, "Hybrid CMOS-memristor logic for boosting the power-efficiency in error tolerant applications", in the 37th International Conference on VLSI Design and 23rd International Conference on Embedded Systems (VLSID 2024), Kolkata, IN, Jan. 06-10, 2024.
dc.identifier.uri https://ieeexplore.ieee.org/document/10483465
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/9993
dc.description.abstract Physical unclonable functions (PUFs) based on static random access memory (SRAM) are essential in security applications, generating unique challenge-response pairs (CRPs) from manufacturing randomness. These CRPs serve as a foundational element in cryptographic systems, ensuring device authenticity. Two major proposed SRAM PUFs are sequence-dependent and reconfigurable SRAM PUFs. Sequence-dependent SRAM PUFs produce a limited range of CRPs, while reconfigurable SRAM PUFs face a similar limitation, even though individual cells can have a considerable CRP space. The single cell in reconfigurable designs also adds to area consumption. Consequently, both types are classified as weak PUFs. To address these challenges, we introduce a novel approach, SDR-PUF, that combines sequence-dependence and reconfigurability in SRAM PUFs. This approach assigns a unique challenge to each column in the PUF array, diversifying the CRP space exponentially. Notably, the PUF design enhances security without a significant increase in area. We implemented an SDR-PUF array of size 8×8 in CMOS 28nm to assess our method’s efficacy. The results were promising: our design produced a vast number of unique CRPs, 9.12×1070, for a set of 32-bit challenges with a sequence length of 5. Furthermore, our design achieved a high throughput of 7.6Gbps at 0.9 V and consumes 0.14pJ energy per bit at 0.9 V for a sequence length of 5, showcasing its efficiency with a nominal native bit error rate and a high inter-hamming distance.
dc.description.statementofresponsibility by Monika Pokharia, Kailash Prasad, Ravi S. Hegde and Joycee Mekie
dc.language.iso en_US
dc.publisher Institute of Electrical and Electronics Engineers (IEEE)
dc.subject SRAM
dc.subject PUF
dc.subject Hardware security
dc.title Hybrid CMOS-memristor logic for boosting the power-efficiency in error tolerant applications
dc.type Conference Paper


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