Abstract:
This study delves into the improved transport properties of 2D MoS 2 devices with metal contacts achieved through substitutional doping or adsorbed metals. We employed ab initio techniques to thoroughly examine electronic transport behavior. The incorporation of metals into MoS 2 is aimed at enhancing device performance and streamlining charge carrier transport. Our results illuminate the influence of doping on electronic and transport properties, offering valuable guidance for optimizing high-performance 2D metal contact in MoS 2 electronic devices.