| dc.contributor.author |
Kharwar, Saurabh |
|
| dc.contributor.author |
Sinha, Soham |
|
| dc.contributor.author |
Agarwal, Tarun Kumar |
|
| dc.contributor.other |
8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2024) |
|
| dc.coverage.spatial |
India |
|
| dc.date.accessioned |
2024-05-16T14:32:40Z |
|
| dc.date.available |
2024-05-16T14:32:40Z |
|
| dc.date.issued |
2024-03-03 |
|
| dc.identifier.citation |
Kharwar, Saurabh; Sinha, Soham and Agarwal, Tarun Kumar, "Ohmic Au-MoS2 contacts enabled by re adsorbed MoS2 source/drain regions: an ab-initio quantum transport study", in the 8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2024), Bangalore, IN, Mar. 03-06, 2024. |
|
| dc.identifier.uri |
https://doi.org/10.1109/EDTM58488.2024.10512287 |
|
| dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/10050 |
|
| dc.description.abstract |
This study delves into the improved transport properties of 2D MoS 2 devices with metal contacts achieved through substitutional doping or adsorbed metals. We employed ab initio techniques to thoroughly examine electronic transport behavior. The incorporation of metals into MoS 2 is aimed at enhancing device performance and streamlining charge carrier transport. Our results illuminate the influence of doping on electronic and transport properties, offering valuable guidance for optimizing high-performance 2D metal contact in MoS 2 electronic devices. |
|
| dc.description.statementofresponsibility |
by Saurabh Kharwar, Soham Sinha and Tarun Kumar Agarwal |
|
| dc.language.iso |
en_US |
|
| dc.publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
|
| dc.subject |
Density functional theory |
|
| dc.subject |
Substitutional doping/adsorption |
|
| dc.subject |
Metal contact |
|
| dc.subject |
MoS2 |
|
| dc.title |
Ohmic Au-MoS2 contacts enabled by re adsorbed MoS2 source/drain regions: an ab-initio quantum transport study |
|
| dc.type |
Conference Paper |
|