Abstract:
This research focuses on the impact of interlayer (IL) variabilities on the depth of the 2-Dimensional Electron Gas (2DEG) and strain distribution within a double-channel AlGaN/GaN High Electron Mobility Transistor (HEMT) heterostructure. We have explored IL variabilities in terms of their materials (A1N and BAIN), compositions, and thicknesses. It observed that BAIN has better 2DEG confinement as compared to A1N and it also enhances the 2DEG with increasing thickness and increasing mole fraction.