| dc.contributor.author |
Kumar, Priyesh |
|
| dc.contributor.author |
Saha, Jhuma |
|
| dc.contributor.other |
8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2024) |
|
| dc.coverage.spatial |
India |
|
| dc.date.accessioned |
2024-05-16T14:32:40Z |
|
| dc.date.available |
2024-05-16T14:32:40Z |
|
| dc.date.issued |
2024-03-03 |
|
| dc.identifier.citation |
Kumar, Priyesh and Saha, Jhuma, "A Comprehensive analysis of interlayer variabilities in double-channel AlGaN/GaN HEMT heterostructure", in the 8th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2024), Bangalore, IN, Mar. 03-06, 2024. |
|
| dc.identifier.uri |
https://doi.org/10.1109/EDTM58488.2024.10511926 |
|
| dc.identifier.uri |
https://repository.iitgn.ac.in/handle/123456789/10052 |
|
| dc.description.abstract |
This research focuses on the impact of interlayer (IL) variabilities on the depth of the 2-Dimensional Electron Gas (2DEG) and strain distribution within a double-channel AlGaN/GaN High Electron Mobility Transistor (HEMT) heterostructure. We have explored IL variabilities in terms of their materials (A1N and BAIN), compositions, and thicknesses. It observed that BAIN has better 2DEG confinement as compared to A1N and it also enhances the 2DEG with increasing thickness and increasing mole fraction. |
|
| dc.description.statementofresponsibility |
by Priyesh Kumar and Jhuma Saha |
|
| dc.language.iso |
en_US |
|
| dc.publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
|
| dc.subject |
GaN |
|
| dc.subject |
AlN AlGaN |
|
| dc.subject |
BAlN |
|
| dc.subject |
Heterostructure |
|
| dc.subject |
HEMT |
|
| dc.subject |
Strain |
|
| dc.subject |
2DEG |
|
| dc.subject |
Interlayer |
|
| dc.title |
A Comprehensive analysis of interlayer variabilities in double-channel AlGaN/GaN HEMT heterostructure |
|
| dc.type |
Conference Paper |
|