Design space and variability analysis of SOI MOSFET for ultralow-power band-to-band tunneling neurons

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dc.contributor.author Sonawane, Jay
dc.contributor.author Patil, Shubham
dc.contributor.author Kadam, Abhishek
dc.contributor.author Singh, Ajay Kumar
dc.contributor.author Lashkare, Sandip
dc.contributor.author Deshpande, Veeresh
dc.coverage.spatial United States of America
dc.date.accessioned 2024-12-20T14:50:07Z
dc.date.available 2024-12-20T14:50:07Z
dc.date.issued 2024-12
dc.identifier.citation Sonawane, Jay; Patil, Shubham; Kadam, Abhishek; Singh, Ajay Kumar; Lashkare, Sandip and Deshpande, Veeresh, "Design space and variability analysis of SOI MOSFET for ultralow-power band-to-band tunneling neurons", IEEE Transactions on Electron Devices, DOI: 10.1109/TED.2024.3507758, Dec. 2024.
dc.identifier.issn 0018-9383
dc.identifier.issn 1557-9646
dc.identifier.uri https://doi.org/10.1109/TED.2024.3507758
dc.identifier.uri https://repository.iitgn.ac.in/handle/123456789/10864
dc.description.abstract Large spiking neural networks (SNNs) require ultralow power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling (BTBT)-based integrator was proposed, enabling the sub-kHz operation of neurons with area and energy efficiency. For an ultralow-power implementation of such neurons, a very low BTBT current is needed, so minimizing current without degrading neuronal properties is essential. Low variability is needed in the ultralow current integrator to avoid network performance degradation in a large BTBT neuron-based SNN. This work addresses device optimization to achieve low BTBT current. We conducted design space and variability analysis in technology computer-aided design (TCAD), utilizing a well-calibrated TCAD deck with experimental data from GlobalFoundries (GFs) 32 nm partially depleted silicon-on-insulator (PD-SOI) MOSFET. First, we discuss the physics-based explanation of the tunneling mechanism. Second, we explore the impact of device design parameters on SOI MOSFET performance, highlighting parameter sensitivities to tunneling current. With device parameters’ optimization, we demonstrate a $\sim$ 20 $\times$ reduction in BTBT current compared to the experimental data. Finally, a variability analysis that includes the effects of random dopant fluctuations (RDFs), oxide thickness variation (OTV), and channel–oxide interface traps ( D $_{\text{IT}}$ ) in the BTBT, subthreshold (SS), and ON regimes of operation is shown. The BTBT regime shows the highest sensitivity to OTV, with variability increasing by up to 25 $\times$ compared to the SS regime. In contrast, RDF and D $_{\text{IT}}$ variability resulted in a 1.25 $\times$ to $\sim$ 10 $\times$ lower coefficient of variation (CV) in the BTBT regime than in the SS regime, indicating better resilience to these sources of variability. The study provides essential design guidelines to enable energy-efficient neuromorphic computing, achieving biologically plausible sub-kHz spiking frequencies.
dc.description.statementofresponsibility by Jay Sonawane, Shubham Patil, Abhishek Kadam, Ajay Kumar Singh, Sandip Lashkare and Veeresh Deshpande
dc.language.iso en_US
dc.publisher Institute of Electrical and Electronics Engineers (IEEE)
dc.subject Band-to-band tunneling (BTBT)
dc.subject Design space analysis
dc.subject Direct tunneling
dc.subject Neuromorphic computing
dc.subject Silicon-on-insulator (SOI)
dc.subject Spiking neural network (SNN)
dc.subject Trap-assisted tunneling
dc.subject Variability
dc.title Design space and variability analysis of SOI MOSFET for ultralow-power band-to-band tunneling neurons
dc.type Article
dc.relation.journal IEEE Transactions on Electron Devices


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