An unified charge centroid model for silicon and low effective mass III-V channel double gate MOS transistors
DR Home
→
Electrical Engineering
→
Conference Papers
→
View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
An unified charge centroid model for silicon and low effective mass III-V channel double gate MOS transistors
Gupta, Amratansh
;
Ganeriwala, Mohit D.
;
Mohapatra, Nihar Ranjan
URI:
https://repository.iitgn.ac.in/handle/123456789/4581
Date:
2019-01
Show full item record
Files in this item
Files
Size
Format
View
There are no files associated with this item.
This item appears in the following Collection(s)
Conference Papers
[537]
Search Digital Repository
Search Digital Repository
This Collection
Browse
All of DSpace
Communities & Collections
Titles
Authors
By Advisor
By Issue Date
Subjects
By Type
By Degree
By Department
This Collection
Titles
Authors
By Advisor
By Issue Date
Subjects
By Type
By Degree
By Department
My Account
Login